Manufacturability and robust design of nanoelectronic logic circuits based on resonant tunnelling diodesPROST, W; AUER, U; TEGUDE, F.-J et al.International journal of circuit theory and applications. 2000, Vol 28, Num 6, pp 537-552, issn 0098-9886Article

InP-based heterostructure field-effect transistors with high-quality short-period (InAs)_3m/(GaAs)_1m superlattice channel layersAUER, U; REUTER, R; HEEDT, C et al.Journal of crystal growth. 1995, Vol 150, Num 1-4, pp 1225-1229, issn 0022-0248, 2Conference Paper

Lithographic tools for producing patterned films composed of gas phase generated nanocrystalsOTTEN, F; AUER, U; KRUIS, F. E et al.Materials science and technology. 2002, Vol 18, Num 7, pp 717-720, issn 0267-0836Conference Paper

Monodisperse aerosol particle deposition : Prospects for nanoelectronicsPROST, W; KRUIS, F. E; OTTEN, F et al.Microelectronic engineering. 1998, Vol 41-42, pp 535-538, issn 0167-9317Conference Paper

Reversal of profound rocuronium block monitored in three muscle groups with sugammadex in poniesMOSING, M; AUER, U; BARDELL, D et al.British journal of anaesthesia. 2010, Vol 105, Num 4, pp 480-486, issn 0007-0912, 7 p.Article

Strained-layer multiple-quantum-well InGaAs/GaAs waveguide modulators operating around 1 μmHUMBACH, O; STÖHR, A; AUER, U et al.IEEE photonics technology letters. 1993, Vol 5, Num 1, pp 49-52, issn 1041-1135Article